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Volumn 512, Issue 3, 2002, Pages 255-261

Substitution of In for Si adatoms and In-induced charge redistribution of the Si(1 1 1)-(7 × 7) surface

Author keywords

Indium; Metal semiconductor interfaces; Scanning tunneling microscopy; Silicon

Indexed keywords

ADSORPTION; CHEMICAL BONDS; ENERGY GAP; METAL INSULATOR TRANSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SUBSTITUTION REACTIONS; SURFACE TOPOGRAPHY;

EID: 0036643840     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01690-4     Document Type: Article
Times cited : (7)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.