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Volumn 512, Issue 3, 2002, Pages 255-261
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Substitution of In for Si adatoms and In-induced charge redistribution of the Si(1 1 1)-(7 × 7) surface
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Author keywords
Indium; Metal semiconductor interfaces; Scanning tunneling microscopy; Silicon
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Indexed keywords
ADSORPTION;
CHEMICAL BONDS;
ENERGY GAP;
METAL INSULATOR TRANSITION;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING INDIUM;
SEMICONDUCTING SILICON;
SUBSTITUTION REACTIONS;
SURFACE TOPOGRAPHY;
ADATOMS;
SCANNING TUNNELING SPECTROSCOPY (STS);
SURFACE REACTIONS;
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EID: 0036643840
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)01690-4 Document Type: Article |
Times cited : (7)
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References (30)
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