Interaction of Sn atoms with the intrinsic dangling-bond states of Si(111)-(7 × 7)

Surface Science

Volumn 366, Issue 1, 1996, Pages 51-59

  Lin, X F ^a   Chizhov, I ^a   Mai, H A ^a   Willis, R F ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Adatoms; Chemisorption; Growth; Metal semiconductor interfaces; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Silicon; Surface chemical reaction; Surface relaxation and reconstruction; Surface structure; Tin

Indexed keywords

ADSORPTION; ATOMS; CHEMICAL BONDS; CHEMISORPTION; FERMI LEVEL; GROWTH (MATERIALS); INTERFACES (MATERIALS); RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE; TIN;

COVALENT BONDING; ENERGY SPECTRUM; INTRINSIC DANGLING BOND STATES; ROOM TEMPERATURE DEPOSITION; SURFACE METAL INSULATOR TRANSITION;

SURFACE PHENOMENA;

EID: 0030269535     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00799-6     Document Type: Article

References (35)

1. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502.
2. J.E. Northrup, Phys. Rev. Lett. 57 (1986) 154.
3. K.D. Brommer, M. Galvan, A. Dal Pino and J.D. Joannopoulos, Surf. Sci. 314 (1994) 57.
4. T. Fauster and F. Himpsel, J. Vac. Sci. Technol. A 1 (1983) 1111. J. Vac. Sci. Technol. A 2 (1984) 815.
5. T. Fauster and F. Himpsel, J. Vac. Sci. Technol. A 1 (1983) 1111. J. Vac. Sci. Technol. A 2 (1984) 815.
6. J.E. Demuth, B.N.J. Persson and A.J. Schell-Sorokin, Phys. Rev. Lett. 51 (1993) 2214; B.N.J. Persson and J.E. Demuth, Phys. Rev. B 30 (1984) 5986.
7. J.E. Demuth, B.N.J. Persson and A.J. Schell-Sorokin, Phys. Rev. Lett. 51 (1993) 2214; B.N.J. Persson and J.E. Demuth, Phys. Rev. B 30 (1984) 5986.
8. R.J. Hamers, R.M. Tromp and J.E. Demuth, Phys. Rev. Lett. 56 (1986) 1972.
9. K.O. Magnusson and B. Reihl, Phys. Rev. B 41 (1990) 12071; K. Pederson and P. Morgen, Phys. Rev. B 52 (1995) R2277.
10. K.O. Magnusson and B. Reihl, Phys. Rev. B 41 (1990) 12071; K. Pederson and P. Morgen, Phys. Rev. B 52 (1995) R2277.
11. I.P. Batra (Ed.) Metallization and Metal-Semiconductor Interface (Plenum, New York, 1989).
12. H.H. Weitering, J. Chen, N.J. DiNardo and E.W. Plummer, Phys. Rev. B 48 (1993) 8119, and references therein.
13. St. Tosch and H. Neddermeyer, Phys. Rev. Lett. 61 (1988) 349.
14. K.J. Wan, X.F. Lin and J. Nogami, Phys. Rev. B 47 (1993) 13700.
15. Y. Hasegawa et al., J. Vac. Sci. Technol. A 8 (1990) 238; R.Z. Bakhizin, C. Park, T. Hashizume and T. Sakurai, Appl. Surf. Sci. 87/88 (1995) 347.
16. Y. Hasegawa et al., J. Vac. Sci. Technol. A 8 (1990) 238; R.Z. Bakhizin, C. Park, T. Hashizume and T. Sakurai, Appl. Surf. Sci. 87/88 (1995) 347.
17. U.K. Kohler, J.E. Demuth and R.J. Hamers, Phys. Rev. Lett. 60 (1988) 2499.
18. P.J. Estrup and J. Morrison, Surf. Sci. 2 (1964) 466.
19. T. Ichikawa, Surf. Sci. 140 (1984) 37.
20. A. Taleb-Ibrahimi, C.A. Sebenne, F. Proix and P. Maigne, Surf. Sci. 163 (1985) 478.
21. C. Tornevik, M. Hammar, N.G. Nilsson and S.A. Flodstrom, Phys. Rev. B 44 (1991) 13144; C. Tornevik et al., Surf. Sci. 314 (1994) 179.
22. C. Tornevik, M. Hammar, N.G. Nilsson and S.A. Flodstrom, Phys. Rev. B 44 (1991) 13144; C. Tornevik et al., Surf. Sci. 314 (1994) 179.
23. C.L. Griffiths et al., J. Vac. Sci. Technol. B 11 (1993) 1559.
24. R.J. Hamers and J.E. Demuth, Phys. Rev. Lett. 60 (1988) 2527.
25. R.G. Pearson, Inorg. Chem. 27 (1988) 734.
26. P. Martensson and R.M. Feenstra, Phys. Rev. B 39 (1989) 7744; R.M. Feenstra, Phys. Rev. B 50 (1994) 4561.
27. P. Martensson and R.M. Feenstra, Phys. Rev. B 39 (1989) 7744; R.M. Feenstra, Phys. Rev. B 50 (1994) 4561.
28. We normalize differential curves using the method proposed by Feenstra [21]. The essence of this method is to transform the curves so that they represent the local density of states as closely as possible, and at the same time avoid the divergence of (dI/dV)/(I/V) curves at the band edges and overweighting of the contribution of higher bias voltages to the tunneling current. This is achieved via normalization of the I/V ratio by a broadening procedure which involves convolution of I/V with the exponential function with a weighting factor. This procedure gives the normalized ratio I/V and thus normalized differential curves (dI/dV)/(I/V) can be calculated. The effect of the described procedure is to emphasize and smooth surface state peaks without changing their position on the energy scale. A small peak at ∼0 V seen in Fig. 4a is an anomaly of this broadening procedure for the clean Si(111)-(7 × 7) surface.
29. P. Martensson et al., Phys. Rev. B 36 (1987) 5974; J.M. Nicholls and B. Reihl, Phys. Rev. B 36 (1987) 8071.
30. P. Martensson et al., Phys. Rev. B 36 (1987) 5974; J.M. Nicholls and B. Reihl, Phys. Rev. B 36 (1987) 8071.
31. J.E. Klepeis and W.A. Harrison, J. Vac. Sci. Technol. B 7 (1989) 964.
32. R.M. Feenstra, Appl. Surf. Sci. 56-58 (1992) 104.
33. R. Wolkow and Ph. Avouris, Phys. Rev. Lett. 60 (1988) 1049.
34. Y. Ma et al., Phys. Rev. B 45 (1992) 5961.
35. X.F. Lin, I. Chizhov, H.A. Mai and R.F. Willis, unpublished.