Fabrication of magnetic rings for high density memory devices

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 577-583

  Cui, Zheng ^a   Rothman, J ^b   Klaui, M ^b   Lopez Diaz, L ^b   Vaz, C A F ^b   Bland, J A C ^b  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

e Beam lithography; Magnetic data storate; MRAM; RIE

Indexed keywords

COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; MAGNETIC MATERIALS; MAGNETORESISTANCE; REACTIVE ION ETCHING; SEMICONDUCTING SILICON;

MAGNETIC RINGS; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

MAGNETIC STORAGE;

EID: 0036643652     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00476-8     Document Type: Conference Paper

References (7)

1. Observation of a bi-domain state and nucleation free switching in mespscopic ring magnets
2. Vortex circulation control in mesoscopic ring magnets
3. Fabrication of 5-7 nm wide etched lines in silicon using 100 keV electron-beam lithography and PMMA resist
4. Comparitive study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography
5. MOCASEL: A total solution to electron beam lithography simulation Emerging Lithographic Technologies III