Analysis of mos device capacitance-voltage characteristics based on the self-consistent solution of the schrödinger and poisson equations

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 159-164

  Raynaud, C ^a   Autran, J L ^b   Masson, P ^b   Bidaud, M ^b   Poncet, A ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ERROR ANALYSIS; FINITE DIFFERENCE METHOD; OXIDES; POISSON DISTRIBUTION;

BOLTZMANN STATISTICS; CAPACITANCE-VOLTAGE CHARACTERISTICS; SCHRODINGER EQUATIONS; SELF-CONSISTENT APPROACH;

MOS DEVICES;

EID: 0034500553     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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