In situ process monitoring in plasma immersion ion implantation based on measurements of secondary electron emission coefficient

Surface and Coatings Technology

Volumn 156, Issue 1-3, 2002, Pages 83-86

  Nakamura, Keiji ^a   Tanaka, Mitsuaki ^b   Sugai, Hideo ^b  

^a CHUBU UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

End point detection; Oxygen implantation depth; Plasma immersion ion implantation; Secondary electron current; Secondary emission coefficient

Indexed keywords

CONDITION MONITORING; OXYGEN; SECONDARY EMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA IMMERSION;

ION IMPLANTATION;

PLASMA TREATMENT;

EID: 0036641205     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00127-5     Document Type: Article

References (8)