Resistivity and Hall voltage study of phosphorus segregation in polycrystalline Si 1-xGe x films

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 168-172

  Qin, W ^a   Ast, D G ^a   Kamins, T I ^b  

^a School of Operations Research and Industrial Engineering   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRAPS; DOPANT SEGREGATION; GE CONTENT; HALL MEASUREMENTS; HALL VOLTAGE; HEAVILY DOPED; PHOSPHORUS SEGREGATION; POLYCRYSTALLINE-SI; RESISTIVITY MEASUREMENT;

DOPING (ADDITIVES); GRAIN BOUNDARIES; PHOSPHORUS; POLYSILICON; SEGREGATION (METALLOGRAPHY);

GERMANIUM;

EID: 0036640467     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483923     Document Type: Article

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