Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy

Journal of Electronic Materials

Volumn 29, Issue 8, 2000, Pages

  Qin, W ^a   Ast, D G ^b   Kamins, T I ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b School of Operations Research and Industrial Engineering   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN BOUNDARIES; PHOSPHORUS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; X RAY SPECTROSCOPY;

SILICON GERMANIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034246123     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0174-5     Document Type: Article

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