Polarized infrared spectroscopy at oblique incidence of optical phonons in In 1-xGa xAs epilayers on InP

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 629-631

  Rowell, N L ^a   Shin, H K ^a   Lockwood, D J ^a   Poole, P J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION DEPENDENCE; EPILAYERS GROWN; FAR INFRARED REFLECTIVITY; INP; LINEAR DEPENDENCE; LONGITUDINAL OPTICS; OBLIQUE ANGLES; OBLIQUE INCIDENCE; OPTICAL PHONONS; PHONON FREQUENCIES; PHONON MODE; POLARIZED INFRARED SPECTROSCOPY; TRANSVERSE OPTICS;

CHEMICAL BEAM EPITAXY; EPITAXIAL GROWTH; GALLIUM; INDIUM ARSENIDE; INFRARED SPECTROSCOPY;

PHONONS;

EID: 0036640421     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483110     Document Type: Article

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