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Volumn 43, Issue 7, 2002, Pages 1605-1614

Application of high-pressure annealing process to dual damascene copper interconnections

Author keywords

Copper interconnection; Dual damascene fabrication process; Electro back scatter diffraction pattern; Electroplating metallization; High pressure annealing; Large scale integration; Sputtering deposition

Indexed keywords

ADHESION; ANNEALING; ARGON; COPPER; CRYSTAL ORIENTATION; ELECTROPLATING; HIGH PRESSURE EFFECTS; LSI CIRCUITS; OPTIMIZATION; RELIABILITY;

EID: 0036630271     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.43.1605     Document Type: Article
Times cited : (13)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.