Hydrogen promoted copper migration in the high pressure anneal process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2191-2196

  Fujikawa, Takao ^a   Yoshikawa, Tetsuya ^a   Ohnishi, Takashi ^a   Sato, Toshiki ^a  

^a KOBE STEEL LTD   (Japan)

Author keywords

Copper; ECD; Fill; Grain growth; Hydrogen; Interconnects; Low k; Metallization; Pressure; PVD

Indexed keywords

ANNEALING; COPPER; ELECTRON MOBILITY; GRAIN GROWTH; HIGH PRESSURE EFFECTS; HOLE MOBILITY; HYDROGEN; INTERDIFFUSION (SOLIDS); MICROHARDNESS; PHYSICAL VAPOR DEPOSITION; STRESS ANALYSIS;

COPPER MIGRATION; HIGH PRESSURE ANNEAL PROCESS (HIPA);

METALLIC FILMS;

EID: 0035302316     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2191     Document Type: Article

References (6)