High-dose Al-implanted 4H-SiC p+-n-n+ junctions

Applied Physics Letters

Volumn 77, Issue 19, 2000, Pages 3051-3053

  Kalinina, E ^a   Kholujanov, G ^a   Solov'ev, V ^a   Strel'chuk, A ^a   Zubrilov, A ^a   Kossov, V ^b   Yafaev, R ^b   Kovarski, A P ^c   Hallen A ^d   Konstantinov, A ^e   Karlsson, S ^e   Adas C ^e   Rendakova, S ^f   Dmitriev, V ^f  

^a IOFFE INSTITUTE   (Russian Federation)

^b Electron Optronic   (Russian Federation)

^c Mekhanobr Analyt Co   (Russian Federation)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^e ACREO AB   (Sweden)

^f TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000070924     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1320868     Document Type: Article

References (12)

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