Argon bombardment-induced topography and sputter yields on Si0.84Ge0.16

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 193, Issue 1-4, 2002, Pages 739-744

  Van Der Berg, N G ^a   Malherbe, Johan B ^a   Odendaal, R Q ^a   Goodman, S A ^a   Premachandra, K ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Atomic force microscopy; Semiconductor; SiGe; Sputter yield; Surface topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SPUTTERING; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS;

SPUTTER YIELDS;

ION BOMBARDMENT;

EID: 0036609335     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00896-0     Document Type: Article

References (11)