Raman study of Zn 1-xBe xSe/GaAs systems with low Be content (x≤0.20)

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9187-9197

  Pages O ^a   Ajjoun, M ^a   Bormann, D ^b   Chauvet, C ^c   Tournie E ^c   Faurie, J P ^c   Gorochov, O ^c  

^a UNIVERSITY OF LIÈGE   (Belgium)

^b UNIVERSITÉ D'ARTOIS   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; ASYMMETRIC BROADENING; CAPACITANCE VOLTAGE MEASUREMENTS; COUPLED MODE; FANO-TYPE INTERFERENCE; HOLE DENSITIES; HOLE GAS; HOLE TRANSFER; INTERFACIAL DEFECT; INTERFACIAL QUALITIES; INTRINSIC PROPERTY; LINE SHAPE ANALYSIS; LONG WAVELENGTH; LONGITUDINAL OPTICAL; NITROGEN-DOPED; NONHOMOGENEITY; P-TYPE; PHENOMENOLOGICAL APPROACH; QUANTITATIVE TREATMENT; RAMAN LINE SHAPES; RAMAN STUDIES; SENSITIVE PROBE; SPATIAL CORRELATION MODELS; STRUCTURAL DISORDERS; STRUCTURAL QUALITIES; THEORETICAL INVESTIGATIONS; TOPOLOGICAL DISORDER;

EQUATIONS OF MOTION; HETEROJUNCTIONS; PHONONS; ZINC;

ZINC ALLOYS;

EID: 0036607880     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471927     Document Type: Article

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