A physics-based model for the substrate resistance of MOSFETs

Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 853-857

  Gao, X F ^a   Liou, J J ^a,b   Ortiz Conde, A ^c   Bernier, J ^d   Croft, G ^d  

^a University of Central Florida   (United States)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^d INTERSIL CORPORATION   (United States)

Author keywords

Electrostatic discharge; Impact ionization; Modeling; MOSFETs; Substrate resistance

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC RESISTANCE; GEOMETRY; IMPACT IONIZATION; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

ELECTROSTATIC DISCHARGE;

MOSFET DEVICES;

EID: 0036604619     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00345-8     Document Type: Article

References (11)

1. New physical model of multiplication induced breakdown in MOSFETs
2. Substrate modeling and lumped substrate resistance extraction for CMOS ESD/latchup simulation
3. A unified substrate current model for weak and strong impact ionization in sub-0.25 NMOS devices
4. An analytical breakdown model for short-channel MOSFET's
5. Pre-turn-on source bipolar injection in graded NMOST's
6. Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations