Properties of LiTaO3 thin films derived by a diol-based sol-gel process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 2982-2986

  Kao, Ming Cheng ^a,b,c   Lee, Maw Shung ^a,b,c   Wang, Chih Ming ^a,b,c   Chen, Hone Zern ^a,b,c   Chen, Ying Chung ^a,b,c,d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

^d HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Dielectric constant; LiTaO3; Pyroelectric coefficient; Sol gel; Thin film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COERCIVE FORCE; CRYSTAL ORIENTATION; DIELECTRIC LOSSES; HIGH TEMPERATURE EFFECTS; LITHIUM COMPOUNDS; PERMITTIVITY; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; PYROELECTRICITY; REMANENCE; SEMICONDUCTING SILICON; SILICA; SOL-GELS; SPIN COATING; X RAY DIFFRACTION ANALYSIS;

REMNANT POLARIZATIONS;

FERROELECTRIC THIN FILMS;

EID: 0036578202     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2982     Document Type: Article

References (21)