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Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 6194-6196

The effect of strain on the resistivity of indium tin oxide films prepared by pulsed laser deposition

(4) Fang, Hui a Miller, Timothy M b Magruder, Robert H b,c Weller, Robert A b

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c BELMONT UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED STRAIN; DIRECT DEPOSITION; EFFECT OF STRAIN; FABRICATION STRATEGIES; FRACTIONAL RESISTANCE; GAUGE FACTORS; IN-VACUUM; INDIUM TIN OXIDE; INDIUM TIN OXIDE FILMS; LASER DEPOSITIONS; MICRO ELECTRO MECHANICAL SYSTEM; PIEZORESISTIVITY; PROCESSING PARAMETERS; STRAIN SENSITIVITY; THICKNESS OF THE FILM;

FILM PREPARATION; INDIUM COMPOUNDS; OXIDE FILMS; PULSED LASER DEPOSITION; TIN; TIN OXIDES;

STRAIN;

EID: 0036572555 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1465115 Document Type: Article

Times cited : (19)

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