Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 991-994

  Wu, Y ^a   Maree C H M ^a   Haglund Jr , R F ^a   Hamilton, J D ^a   Morales Paliza, M A ^a   Huang, M B ^a   Feldman, L C ^a   Weller, R A ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; MATHEMATICAL MODELS; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; PARTIAL PRESSURE; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM TIN OXIDE; PULSED LASER DEPOSITION (PLD);

SEMICONDUCTING FILMS;

EID: 0032621757     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370864     Document Type: Article

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