Band gap energy bowing and residual strain in CuAl(S xSe 1-x) 2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 5909-5914

  Harada, Yoshiyuki ^a   Nakanishi, Hisayuki ^a   Chichibu, Shigefusa F ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; BAND GAP ENERGY; BOWING PARAMETERS; CHALCOPYRITE SEMICONDUCTOR EPILAYERS; CRITICAL VALUE; EXCITONIC PHOTOLUMINESCENCE; GAAS SUBSTRATES; GAAS(001); HIGH-QUALITY FILMS; INCORPORATION RATIO; LATTICE STRAIN; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY; NATURAL SELECTION RULE; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; PHOTOREFLECTANCE; PREFERRED ORIENTATIONS; QUADRATIC DEPENDENCE; RESIDUAL STRAINS; ULTRAVIOLET SPECTRAL RANGE;

ALUMINUM; COPPER COMPOUNDS; ENERGY GAP; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; VAPORS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 0036571906     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1468907     Document Type: Article

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