Infrared reflection spectroscopic investigation of adsorption of SiHx(CH3)4-x on Si surfaces

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 85, Issue 5, 2002, Pages 59-65

  Shinohara, Masanori ^a   Shoji, Daisei ^a   Maehama, Takehiro ^b   Akama, Yosuke ^a   Niwano, Michio ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF THE RYUKYUS   (Japan)

Author keywords

Dissociative adsorption; Infrared spectroscopy; Methylsilane; Microelectronic materials; Si(100) surface

Indexed keywords

ADSORPTION; CHEMICAL BONDS; DIMERS; HYDROGEN; INFRARED SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACE REACTIONS;

INFRARED ADSORPTION SPECTROSCOPY;

SILANES;

EID: 0036570678     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.1108     Document Type: Article

References (6)

1. Surface infrared spectroscopy
2. Hydrogen adsorption and desorption processes on Si (100)
3. 2O-chemisorbed Si(100) surface studied by in-situ infrared spectroscopy
4. High-resolution infrared spectroscopy of adsorbates on semiconductor surfaces: Hydrogen on Si (100) and Ge (100)
5. Chemical effects on the frequencies of Si-H vibrations in amorphous solids