Change of preferred orientation in TiN thin films grown by ultrahigh vacuum reactive ion beam assisted deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 807-812

  Shin, H J ^a   Cho, Y J ^a   Won, J Y ^a   Kang, H J ^a   Baeg, C H ^a   Hong, J W ^a   Wey, M Y ^a  

^a Chungbuk National University   (South Korea)

Author keywords

Assist energy; Ion beam assist deposition; Preferred orientation; RBS; TiN

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; INTERFACIAL ENERGY; ION BEAM ASSISTED DEPOSITION; MOLECULAR ORIENTATION; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; TITANIUM NITRIDE; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

PREFERRED ORIENTATION;

THIN FILMS;

EID: 0036569152     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01246-0     Document Type: Conference Paper

References (9)