Structural characterization of amorphised InAs with synchrotron radiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 851-855

  Azevedo, G deM ^a   Ridgway, M C ^a   Yu, K M ^b   Glover, C J ^c   Foran, G J ^d  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c MAX IV LABORATORY   (Sweden)

^d AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Amorphous solids; EXAFS; InAs; Ion implantation

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; CRYSTALLINE MATERIALS; ELECTROMAGNETIC WAVE ABSORPTION; ION IMPLANTATION; SYNCHROTRON RADIATION; X RAYS;

AMORPHOUS SEMICONDUCTORS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036568970     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00471-8     Document Type: Conference Paper

References (11)