Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure

Solid-State Electronics

Volumn 46, Issue 5, 2002, Pages 651-654

  Park, Jinsung ^a   Jo, Seong June ^b   Hong, Songcheol ^a   Song, Jong In ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Camel diode structure; Dark current; Detectivity; Quantum well infrared photodetector

Indexed keywords

ELECTRON TRANSITIONS; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

CAMEL DIODE STRUCTURE;

INFRARED DETECTORS;

EID: 0036568236     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00334-3     Document Type: Article

References (17)

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