Detection of donor-like deep levels in p-type Si containing a thin Er-doped layer by deep-level transient spectroscopy

Semiconductor Science and Technology

Volumn 17, Issue 5, 2002, Pages 497-501

  Chen, Yu ^a   Chen, Gang ^a   Tian, Yun ^a   Lu, Fang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ERBIUM; LUMINESCENCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SUBSTRATES;

ERBIUM-DOPED LAYER;

SEMICONDUCTING SILICON;

EID: 0036566747     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/5/316     Document Type: Article

References (9)