Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 861-864

  Park, M G ^a   Choi, W S ^a   Hong, B ^a   Kim, Y T ^a   Yoon, D H ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FILM GROWTH; GLOW DISCHARGES; LIGHT ABSORPTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON CARBIDE; TEMPERATURE; ULTRAVIOLET SPECTROSCOPY;

CORNING GLASSES; GLOW DISCHARGE DECOMPOSITION; HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS; OPTICAL BANDGAP ENERGY; RADIO FREQUENCY POWER; SPECTROSCOPIC ELLIPSOMETRY; TRANSMITTANCE;

THIN FILMS;

EID: 0036564788     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1472416     Document Type: Article

References (12)