A comparative study of boron and phosphorus doping effects in SiC : H films prepared by electron cyclotron resonance plasma CVD

International Journal of Electronics

Volumn 85, Issue 6, 1998, Pages 723-736

  Yoon, S F ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000649055     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072198133770     Document Type: Article

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