Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI)

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 520-522

  Niu, Guofu ^a   Cressler, John D ^a   Mathew, Suraj J ^a   Ahlgren, David C ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; THRESHOLD VOLTAGE;

CORNER CONDUCTION; SHALLOW TRENCH ISOLATION (STI);

MOSFET DEVICES;

EID: 0033341646     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791929     Document Type: Article

References (12)

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