Evidence for PT-ferroelectrics interface scenario of different fatigue behaviors between Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin film capacitors

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 179-182

  Chu, M W ^a   Ganne, M ^a   Tessier, P Y ^a   Eon, D ^a   Caldes, M T ^a   Brohan, L ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

Bi3.25La0.75 Ti3O12; Bi4Ti3O12; Defect; Fatigue; Interface; X ray photoelectron spectroscopy (XPS)

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FATIGUE RESISTANCE;

CAPACITORS;

EID: 0036557643     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00102-6     Document Type: Conference Paper

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