Study of oxygen and carbon species on Si substrate during in-situ cleaning prior to high-quality epitaxial deposition

Metals and Materials International

Volumn 8, Issue 2, 2002, Pages 183-190

  Kim, Hyoun Woo ^a   Kim, Kwang Sik ^a   Lee, Jung Ho ^a  

^a Inha University   (South Korea)

Author keywords

Carbon; Chemical vapor deposition; Epitaxy; Oxygen

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CLEANING; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL FILMS; EPITAXIAL GROWTH; OXYGEN; SILICON WAFERS;

CARBON SPECIES; EPITAXIAL DEPOSITION; HIGH QUALITY EPITAXIAL FILMS; HYDROGEN PLASMAS; IN-SITU CLEANING; REACTION MECHANISM; STRUCTURAL QUALITIES; SUBSTRATE DAMAGE;

CARBON FILMS;

EID: 0036553549     PISSN: 12259438     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf03027016     Document Type: Article

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