Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth

Thin Solid Films

Volumn 302, Issue 1-2, 1997, Pages 169-178

  Kim, Hyoun Woo ^a,b   Zhou, Zhen Hong ^a   Reif, Rafael ^a  

^a Massachusetts Institute of Technology   (United States)

^b NONE   (South Korea)

Author keywords

Chemical vapour deposition; Hydrogen; Plasma processing and deposition; Transmission electron microscopy

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SURFACE CLEANING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

MULTICHAMBER CHEMICAL VAPOR DEPOSITION (MSCVD);

SEMICONDUCTING FILMS;

EID: 0031170246     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09548-X     Document Type: Article

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