Growth and characterization of Al1-XMnXas (X ≤ 4%) magnetic semiconductor: Thin film and superlattices

Journal of Magnetism and Magnetic Materials

Volumn 242-245, Issue , 2002, Pages 967-969

  Liu, Zhiyu ^a,b   De Boeck, J ^a   Moshchalkov, V V ^b   Borghs, G ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

3D impurities semiconductors; Low temperature GaAs; Magnetic semiconductors; MBE

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL IMPURITIES; ELECTRIC PROPERTIES; MAGNETIC MOMENTS; MOLECULAR BEAM EPITAXY; PARAMAGNETIC MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SUPERLATTICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DILUTED MAGNETIC SEMICONDUCTORS (DMS);

MAGNETIC SEMICONDUCTORS;

EID: 0036544071     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)01314-2     Document Type: Article

References (11)