Low temperature swelling in beta-SiC associated with point defect accumulation

Materials Transactions

Volumn 43, Issue 4, 2002, Pages 612-616

  Katoh, Yutai ^a   Kishimoto, Hirotatsu ^a   Kohyama, Akira ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Helium effect; Irradiation effect; Point defect accumulation; Silicon carbide; Swelling

Indexed keywords

HELIUM; LOW TEMPERATURE EFFECTS; NEUTRON IRRADIATION; POINT DEFECTS; PROFILOMETRY; RADIATION EFFECTS; SWELLING;

ATOMIC DISPLACEMENT DAMAGE; DISPLACEMENT DAMAGE RATE; HELIUM EFFECT; POINT DEFECT ACCUMULATION;

SILICON CARBIDE;

EID: 0036543244     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.43.612     Document Type: Article

References (14)