He enhancement of Hyper Raman effect from semiconductor surfaces

Physica Status Solidi (A) Applied Research

Volumn 170, Issue 2, 1998, Pages 291-300

  Ipatova, I P ^a   Maslov, A Yu ^a   Udod, L V ^a   Benedek, G ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Istituto Nazionale per la Fisica della Materia Milan   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); LIGHT SCATTERING; MAXWELL EQUATIONS; NONLINEAR OPTICS; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA;

ELECTRIC DISPLACEMENT; ELECTRONIC COLLISIONS; HYPER RAMAN EFFECT;

RAMAN SPECTROSCOPY;

EID: 0032305577     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199812)170:2<291::AID-PSSA291>3.0.CO;2-R     Document Type: Article

References (5)

1. E. M. LIFSHITS and L. P. PITAEVSKII, Physical Kinetics, Pergamon Press, Oxford 1981.
2. A. A. RUKHADZE and V. P. SILIN, Soviet Phys. - Uspekhi 7, (1964).
3. L. D. LANDAU and E. M. LIFSHITS, Electrodynamics of Continuous Media, Pergamon Press, Oxford 1984.
4. I. P. IPATOVA, A. V. SUBASHIEV, and L. V. UDOD, Soviet Phys. - Solid State 28, 1712 (1986).
5. I. P. IPATOVA, A. YU. MASLOV, L. V. UDOD, G. BENEDEK, and G. PANZARINI, Surf. Sci. 377, (1997).