Chemical-mechanical polishing of PECVD silicon nitride

Thin Solid Films

Volumn 290-291, Issue , 1996, Pages 453-455

  Hu, Yong Zhong ^a   Yang, G R ^a   Chow, T Paul ^a   Gutmann, Ronald J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Chemical mechanical polishing; Silicon nitride

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; SILICA; SLURRIES; SURFACE ROUGHNESS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL MECHANICAL POLISHING (CMP); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SILICON NITRIDE;

EID: 0030412754     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09032-3     Document Type: Article

References (6)

1. SRC Topical Research Conference on Chemical Mechanical Polishing (CMP), July 26-27, 1995, Rensselaer Polytechnic Institute, Troy, NY.
2. SRC Topical Research Conference on Low Dielectric Constant ILDs, August 9-10, 1994, Rensselaer Polytechnic Institute, Troy, NY.
3. B.-T. Dai, W.-F. Wu, C.-H. Liu, C.-W. Liu and C.-F. Yeh, Characterization of Chemical Mechanical Polishing Process with Mechanical Properties of Nitride Films, June 27-29, 1995VMIC Conf., Univ. of South Florida, Tampa, FL, pp. 485-487.
4. F. Brotzen, Mechanical testing of thin films, Int. Mater. Rev., 39 (1) (1994) 24-45.
5. X. Cai and H. Bangert, Hardness measurement of thin films -determining the critical ratio of depth to thickness using FEM, Thin Solid Films, 264 (1995) 59-71.
6. L.C. Feldman and J.W. Mayer, Fundamental of Surface and Thin Film Analysis, PTR Prentice Hall, Englewood Cliffs, NJ.