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Volumn 237-239, Issue 1 4 II, 2002, Pages 1610-1614

Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(0 0 1) substrate

(4) Ueno, Kei a Tokuchi, S a Saiki, K a Koma, A a

Author keywords

A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Gallium compound; B2. Semiconducting gallium compounds

Indexed keywords

HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE TREATMENT; THERMAL EFFECTS; THIN FILMS;

FLUX RATIO;

EPITAXIAL GROWTH;

EID: 0036531458 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02353-3 Document Type: Article

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.