InP melts: Investigation of wetting between boat materials in Bridgman growth

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1697-1700

  Shimizu, Atsushi ^a,b,d   Nishizawa, Jun Ichi ^b,c   Oyama, Yutaka ^a,b,c   Suto, Ken ^a,b,c  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^d SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

A1. Stresses; A2. Bridgman technique; B2. Semiconducting indium phosphide

Indexed keywords

ADHESIVES; DISLOCATIONS (CRYSTALS); QUARTZ; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EXPANSION; THERMAL STRESS; VAPOR PRESSURE; WETTING;

BRIDGMAN GROWTH;

CRYSTAL GROWTH FROM MELT;

EID: 0036531102     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02333-8     Document Type: Article

References (6)

1. Proceedings of the international symposium on gallium arsenide and related compounds