In situ observation of initial homoepitaxial growth on the Si(1 1 1) 7 × 7 surface using scanning tunnelling microscopy

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 35-38

  Shimada, Wataru ^a   Tochihara, Hiroshi ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Dimer adatom stacking fault structure; A1. Growth models; A1. Nucleation; A1. Surface structure; B2. Semi conducting silicon

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; IMAGE RECONSTRUCTION; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; STACKING FAULTS;

HOMOEPITAXIAL GROWTH;

EPITAXIAL GROWTH;

EID: 0036530990     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01845-0     Document Type: Article

References (12)