Variation of silicon melt viscosity with boron addition

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1667-1670

  Nishimura, Suzuka ^b   Matsumoto, Satoru ^a   Terashima, Kazutaka ^b  

^a KEIO UNIVERSITY   (Japan)

^b SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Impurities; B2. Semiconducting silicon

Indexed keywords

BORON; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; HEAT CONVECTION; OSCILLATIONS; POLYSILICON; RATE CONSTANTS; SEMICONDUCTOR DOPING; SILICON WAFERS; TEMPERATURE DISTRIBUTION; VISCOSITY;

SILICON MELTS;

CRYSTAL GROWTH FROM MELT;

EID: 0036530907     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02317-X     Document Type: Article

References (5)