Grown-in defects in silicon crystals

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 III, 2002, Pages 1678-1684

  Nakamura, Kozo ^a   Saishoji, T ^a   Tomioka, J ^a  

^a Komatsu Electronic Metals Co Ltd   (Japan)

Author keywords

A1. Defects; A1. Nucleation; A1. Point defects; A2. Czochralski method; B1. Silicon

Indexed keywords

AGGLOMERATION; COOLING; CRYSTALLIZATION; INTERFACES (MATERIALS); MELTING; NUCLEATION; POINT DEFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

GROWN-IN DEFECTS; VOID DEFECTS;

CRYSTAL GROWTH FROM MELT;

EID: 0036530589     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02323-5     Document Type: Article

References (14)