SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 499, Issue 2-3, 2002, Pages 244-250

Study of Si 2p core level shift at the As/Si(0 0 1)-2 × 1 surface

(6) Gunnella, R a Yeom, H W b Bullock, E L c Johansson, L S O d Kono, S e Solal, F f

a UNIVERSITY OF CAMERINO (Italy)

b Yonsei University (South Korea)

c UNIVERSITY OF LAUSANNE (Switzerland)

d TU DORTMUND UNIVERSITY (Germany)

e TOHOKU UNIVERSITY (Japan)

f UNIVERSITÉ DE RENNES 1 (France)

Author keywords

Electron solid interactions, scattering, diffraction; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION;

SURFACE CORE LEVEL SHIFTS (SCLS);

SURFACE STRUCTURE;

EID: 0036499370 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01910-0 Document Type: Article

Times cited : (2)

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