An mK × nK bouwblok CCD image sensor family - Part I: Design

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 361-369

  Kreider, Greg ^b,c   Bosiers, Jan T ^a,b  

^a IEEE

^b NXP SEMICONDUCTORS   (Netherlands)

^c CYPRESS SEMICONDUCTOR   (United States)

Author keywords

Charge transfer devices; Charge transfer image sensors; Image sensors

Indexed keywords

BANDWIDTH; CHARGE COUPLED DEVICES; LIGHT AMPLIFIERS; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; ROUTERS;

DIGITAL PHOTOGRAPHY;

IMAGE SENSORS;

EID: 0036494632     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987104     Document Type: Article

References (10)

1. An mK × nK bouwblok CCD image sensor family - Part II: Characterization
2. Design aspects and characterization of EEV large area CCDs for scientific and medical applications
3. A 2.2 Mpixel FT-CCD imager, according to the Eureka HDTV-standard
4. A 5 × 9 inch polysilicon gray-scale color head down display chip
5. Groove-fill of tungsten and poly-Si membrane technology for high performance (HDTV) FT-CCD imagers
6. A frame-transfer CCD color imager with vertical antiblooming
7. A 2/3″ 2-M pixel progressive scan FT-CCD for digital still camera applications
8. Packaging and operation of Philips 7 K × 9 K CCD's