An mK × nK bouwblok CCD image sensor family - Part II: Characterization

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 370-376

  Kreider, Greg ^b   Dillen, Bart G M ^a,c   Heijns, Henk ^c   Korthout, Laurens ^c   Roks, Edwin ^a,c  

^a IEEE

^b CYPRESS SEMICONDUCTOR   (United States)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Charge transfer devices; Charge transfer image sensors; Image sensors

Indexed keywords

CHARGE COUPLED DEVICES; CHARGE TRANSFER; CROSSTALK; QUANTUM EFFICIENCY; SHOT NOISE;

CHARGE TRANSFER EFFICIENCY (CTE);

IMAGE SENSORS;

EID: 0036494002     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987105     Document Type: Article

References (5)

1. An mK × nK bouwblok CCD image sensor family - Part I: Design
2. Characterization of building block imagers with respect to linear dynamic range
3. A technique for suppressing dark current generated by interface states in buried channel CCD imagers
4. Characterization of surface- and buried-channel detection transistors for CCD on-chip amplifiers