Growth and decomposition of bulk GaN: Role of the ammonia/nitrogen ratio

Journal of Crystal Growth

Volumn 236, Issue 4, 2002, Pages 529-537

  Shin, H ^a   Arkun, E ^a   Thomson, D B ^a   Miraglia, P ^a   Preble, E ^a   Schlesser, R ^a   Wolter, S ^a   Sitar, Z ^a   Davis, R F ^a  

^a North Carolina State University   (United States)

Author keywords

A1. Decomposition; A2. Groth from vapor; A2. Single crystal growth; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; ANNEALING; DECOMPOSITION; MASS SPECTROMETRY; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SURFACE ROUGHNESS;

NITROGEN RATIO;

CRYSTAL GROWTH;

EID: 0036494413     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00825-4     Document Type: Article

References (16)