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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 2, 2002, Pages 356-361

Effect of O2 gas partial pressure on mechanical properties of SiO2 films deposited by radio frequency magnetron sputtering

(3) Fujiyama, H a Sumomogi, T b Endo, T b

a FUKUOKA INSTITUTE OF TECHNOLOGY (Japan)

b HIROSHIMA KOKUSAI GAKUIN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; AMORPHOUS FILMS; ARGON; ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; CRYSTAL STRUCTURE; HARDNESS; MAGNETRON SPUTTERING; OXYGEN; PARTIAL PRESSURE; RATE CONSTANTS; SILICA; SPUTTER DEPOSITION; SURFACE TOPOGRAPHY; VICKERS HARDNESS TESTING; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICROANALYZERS;

THIN FILMS;

EID: 0036494051 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1446442 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.