Investigation of the surface of P-implanted LPCVD silicon films

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 240-242

  Plugaru, Rodica ^a   Vasile, E ^b   Cobianu, C ^a   Dascalu, D ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b Metav SA Bucuresti   (Romania)

Author keywords

Low pressure chemical vapor deposition; Phosphorus implanted silicon films; Surface morphology

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; GRAIN BOUNDARIES; GRAIN GROWTH; ION IMPLANTATION; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING SILICON;

EID: 0000861189     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01714-X     Document Type: Article

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