Raman study of self-assembled InAs quantum dots embedded in AlAs: Influence of growth temperature

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 199-202

  Tenne, D A ^a   Bakarov, A K ^a   Toropov, A I ^a   Zahn, D R T ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Phonons; Raman spectra; Self assembled quantum dots

Indexed keywords

ELECTRON TRANSITIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

EXCITATION ENERGIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036493071     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00519-7     Document Type: Article

References (9)