Vertical field effect transistors realized by cleaved-edge overgrowth

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 920-924

  Ertl, F ^a   Asperger, T ^a   Deutschmann, R A ^a   Wegscheider, W ^a,b   Bichler, M ^a   Buhm G ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

Cleaved edge overgrowth; DC transport; Vertical transistor

Indexed keywords

FABRICATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSPORT PROPERTIES;

CLEAVED-EDGE OVERGROWTH;

FIELD EFFECT TRANSISTORS;

EID: 0036492733     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00235-7     Document Type: Article

References (10)