Fabrication of height-controlled InAs quantum dots on GaAs surfaces by in situ AsBr3 etching and molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1151-1154

  Yang, T ^a   Kohmoto, S ^a   Nakamura, H ^a   Asakawa, K ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

AsBr3; In situ etching; InAs quantum dots; Self organized growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; FABRICATION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

SELF-ORGANIZED GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036492716     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00324-7     Document Type: Conference Paper

References (13)