Approaches for patterning of aluminum

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 85-100

  Frank, Wolfgang E ^a  

^a Triangle Research   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BROMINE; CHEMICAL POLISHING; CHLORINE; DRY ETCHING; ELECTROMIGRATION; METALLIZING; REACTIVE ION ETCHING;

CHEMICAL MECHANICAL POLISHING (CMP); INDUCTIVE COUPLED PLASMA SOURCES;

MICROELECTRONIC PROCESSING;

EID: 0002224716     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00034-2     Document Type: Article

References (67)

1. D. Pramanik and A.N. Saxena, VLSI metallization using aluminum and its alloys, Part I, Solid State Technol. 26(1) (1983) 127; Part II, Solid State Technol. 26(3) (1983) 127.
2. D. Pramanik and A.N. Saxena, VLSI metallization using aluminum and its alloys, Part I, Solid State Technol. 26(1) (1983) 127; Part II, Solid State Technol. 26(3) (1983) 127.
3. S.R. Wilson, C.J. Tracy and J.L. Freemann (eds.), Handbook of Multilevel Metallization for Integrated Circuits, Noyes Publications, Park Ridge, NJ, 1993.
4. P.E. Riley, Plasma etching of aluminum metallizations for ultralarge scale integrated circuit, J. Electrochem. Soc. 140(5) (1993) 1518.
5. P.E. Riley, S.S. Peng and L. Fang, Plasma etching of aluminum for ULSI circuits, Solid State Technol. 36(2) (1993) 47.
6. G.C. Schwartz, Reactive plasma-assisted etching of aluminum and aluminum alloys, in Proc. 5th Symp. on Plasma Processing (PV85-1), G.S. Mathad et al. (eds.), (Electrochem. Soc., Pennington, 1985), pp. 26-56.
7. H.-J. Tiller, Plasmachemisches Ätzen von Al, Wiss. Z. Friedrich-Schiller-Univ. 33 (1-2) (1984) 145.
8. A. Weiss, Plasma etching of aluminum: Review of process and equipment technology, Semicond. Int. 5(11) (1982) 69.
9. R.F. Reichelderfer, Single wafer plasma etching: 1. Al and Al/Si alloys, Solid State Technol. 25(4) (1982) 160.
10. D.W. Hess, Plasma etch chemistries of aluminum and aluminum alloy films, Plasma Chem. Plasma Proc. 2(2) (1982) 141.
11. L. Kammerdiner, Aluminum plasma etch considerations for VLSI production, Solid State Technol. 24(10) (1981) 79.
12. D.W. Hess, Plasma etching of aluminum, Solid State Technol. 24(4) (1981) 189.
13. H. Landis et al., Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing, Thin Solid Films 220 (1992) 1.
14. P. Kücher et al., Advanced metallization technology for 256 M DRAM, Appl. Surf. Sci. 91 (1995) 359.
15. T. Licata et al., Dual Damascene Al wiring for 256 M DRAM, Proc. VMIC 1995, pp. 596-602.
16. D. Sameith, H.-J. Tiller and F.-W. Breitbarth, Dry patterning of Al and Al alloys, Cryst. Res. Technol. 21(3) (1986) 407.
17. 4 plasmas, J. Electrochem. Soc. 129(11) (1982) 2530.
18. 4 on aluminum reactive ion etching, J. Electrochem. Soc. 129(11) (1982) 2522.
19. A. Cox and P. Kelly, Plasma etching of silicon aluminum, Colloquium on Dry Etching Related to Silicon, London, UK, March 2nd, 1982, p. 7/1-2.
20. K. Hirobe, Y. Kureishi and T. Tsuchimoto, Some problems in plasma etching of Al and Al-Si alloy films, J. Electrochem. Soc. 128(12) (1981) 2686.
21. 4 etching, in Plasma Processing: Proc. Symp. on Plasma Etching and Deposition, G. Frieser and C.J. Mogab (eds.) (Electrochem. Soc., Pennington, NJ, 1981) pp. 243-252.
22. D.K. Ranadive and D.L. Losee, Aluminum plasma etching using carbon tetrachloride, in Plasma Processing: Proc. Symp. on Plasma Etching and Deposition, G. Frieser and C.J. Mogab (eds.) (Electrochem. Soc., Pennington, NJ, 1981) pp. 236-242.
23. K. Tokunaga and D.W. Hess, Aluminum etching in carbon tetrachloride plasmas, J. Electrochem. Soc. 127(4) (1980) 928.
24. T. Hansen and N.S. Viswanathan, Etchant for the reactive ion etch of metals, IBM Techn. Discl. Bul. 20(4) (1977) 1391.
25. 2 mixtures, Plasma Chem. Plasma Proc. 9(4) (1989) 513.
26. A.A. Chambers, The application of reactive ion etching to the definition of patterns in Al-Si-Cu alloy conductor layers and thick silicon oxide films, Solid State Technol. 26(1) (1983) 83.
27. 2 Mixture, Jap. J. Appl. Phys. 21(10) (1982) 1412.
28. A.A. Chambers, The reactive ion etching of Al-Si-Cu alloy films, Solid State Technol. 25(8) (1982) 93.
29. 3, Microelectron. Eng. 1(1) (1983) 3.
30. T.O. Herndon, R.L. Burke and J.F. Howard, Plasma etching of aluminum, Proc. 4th Biennial University/Government/Industry Microelectronics Symp., Starkville, MS, USA, 20-28 May 1981, p. X/2-25.
31. C.Y. Fu, R. Hsu and V. Malba, Magnetron-enhanced reactive ion etching of Al-(1%)Si-(2%)Cu alloy, MRS Symp. Proc. 223 (1991) 385.
32. 4 reactive ion etching, Jap. J. Appl. Phys. 26(9) (1987) 1568.
33. 4 plasma analysis in reactive ion etching, ISIAT '83 and IPAT '83 (1983) 1521.
34. 4, J. Electrochem. Soc. 129(5) (1982) 1150.
35. 4, J. Vac. Sci. Technol. 20(2) (1982) 186.
36. J.H. Lin and W. Ray, Plasma etch of aluminum alloy, in ULSI Science and Technology 1989, PV 89-9 (Electrochem. Soc., Pennington, NJ, 1989) pp. 445-462.
37. V. Grewal and B. Spuler, personal communications.
38. S. Samukawa, T. Toyosato and E. Wani, Low radio-frequency-biased electron cyclotron resonance plasma etching, Appl. Phys. Lett. 58(9) (1991) 896.
39. D.A. Danner and D.W. Hess, Reaction of atomic and molecular chlorine with aluminum, J. Appl. Phys. 59(3) (1986) 940.
40. L.Y. Tsou, Ion beam-assisted etching of aluminum with chlorine, J. Electrochem. Soc. 132(8) (1985) 2011.
41. 2 with W(111) and Nb, J. Vac. Sci. Technol. B3(1) (1985) 9.
42. F.R. Clayton and S.A. Beeson, High-rate anisotropic etching of aluminum on a single-wafer reactive ion etcher, Solid State Technol. 36(7) (1993) 93.
43. S. Bradley, C.-H. Chen and G. Kovall, High-density plasma etching of aluminum alloys, Proc. 8th Int. IEEE VLSI Multilevel Conf., 1991, Santa Clara, CA, USA, pp. 298-300.
44. M. Tanaka, H. Araki, T. Suehiro, N. Wada and T. Tani, Aluminum alloy interconnect etching by ECR plasma, The Sumitomo Search 47(Oct.) (1991) 40.
45. A. Hall and K. Nojiri, Electron cyclotron resonance etching of Al-Si-Cu, Solid State Technol. 34(5) (1991) 107.
46. 2 plasmas, Microelectron. Manuf. Test. 11(11) (1988) 11.
47. W. Windbracke, H.L. Huber, P. Staudt and G. Zwicker, Fabrication of sub-half μm patterns for MOS devices by means of X-ray lithography and plasma etching, Microelectron. Eng. 9 (1989) 109.
48. G. Zwicker, L. Csepregi, H.-L. Huber, W. Windbracke and A. Heuberger, Fabrication of 0.5 μm poly-Si and aluminum interconnections by means of X-ray lithography and plasma etching, Proc. SPIE 923 (1988) 55.
49. C.-K. Hu, N. Mazzeo, S. Basavaiah, M.B. Small and K.W. Choi, Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections, J. Vac. Sci. Technol. A8(3) (1990) 1498.
50. L. Colombo and F. Illuzzi, Plasma etching of aluminum alloys for submicron technologies, Solid State Technol. 33(2) (1990) 95.
51. R.H. Bruce and G.P. Malafsky, High rate anisotropic aluminum etching, J. Electrochem. Soc. 130(6) (1983) 1369.
52. 4 gases, J. Electrochem. Soc. 137(1) (1990) 249.
53. J.-S. Maa, Surface passivation by adding fluorocarbons and chlorofluorocarbons into an Al dry etch reactor, J. Vac. Sci. Technol. B5(3) (1987) 652.
54. A. Landauer-Keaton and D.W. Hess, Reaction of atomic and molecular bromine with aluminum, J. Appl. Phys. 63(2) (1988) 533.
55. K. Fujino and T. Oku, Dry etching of Al alloy films using HBr mixed gases, J. Electrochem. Soc. 139(9) (1992) 2585.
56. A. Landauer-Keaton and D.W. Hess, Aluminum etching in boron tribromide plasmas, J. Vac. Sci. Technol. A3(3) (1985) 962.
57. A. Landauer-Keaton and D.W. Hess, Temperature and flow effects in aluminum etching using bromine-containing plasmas, J. Vac. Sci. Technol. B6(1) (1988) 72.
58. O. Korgh, Bromine-based aluminum etching, Semicond. Int. (May 1988).
59. M. Tilenschi, Al-etching in a tri-electrode, dual frequency reactor with a carbon-free gas chemistry, Proc. 1st Tegal Europe Seminar, 1989, pp. 1-8.
60. 2 mixtures, J. Electrochem. Soc. 135(5) (1988) 1184.
61. W.E. Frank and D. Schlosser, Metal etch with hydrogen iodine chemistry, Proc. 5th LAM European Plasma Seminar, 1993.
62. W.E. Frank, Metal etch with HI-addition to conventional chemistry, Proc. VLSI Technol. Symp. (1995) 91.
63. W.E. Frank, unpublished results.
64. M.A. Fury, Emerging developments in CMP for semiconductor planarization, Solid State Technol. 38(4) (1995) 47.
65. I. Ali, S.R. Roy and G. Shinn, Chemical-mechanical polishing of interlayer dielectric: A review, Solid State Technol. 37(10) (1994) 63.
66. R. Kolenkow and R. Nagahara, Chemical-mechanical wafer polishing and planarization in batch system, Solid State Technol. 35(6) (1992) 112.
67. S. Sivaram et al., Planarizing interlevel dielectrics by chemical-mechanical polishing, Solid State Technol. 35(5) (1992) 87.