Spatial and temporal variation of the ion flux impinging on the wafer surface in presence of a plasma instability

IEEE Transactions on Plasma Science

Volumn 30, Issue 1 I, 2002, Pages 120-121

  Kim, Tae Won ^a   Aydil, Eray S ^a  

^a University of California   (United States)

Author keywords

Plasma materials processing applications; Plasma measurements; Plasma oscillations; Plasma stability

Indexed keywords

ARGON; CHEMICAL REACTORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; IONIZATION; IONS; PLASMA APPLICATIONS; PLASMA ETCHING; PLASMA OSCILLATIONS; PLASMA STABILITY; SILICON WAFERS;

ION FLUXES;

INDUCTIVELY COUPLED PLASMA;

EID: 0036478133     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2002.1003953     Document Type: Article

References (5)

1. Multiple steady states in a radio frequency chlorine glow discharge
2. Plasmoid formation and multiple steady states in a low pressure, inductively coupled electronegative plasma
3. Multiple steady states in electron cyclotron resonance plasma reactors
4. Instabilities in low-pressure inductive discharges with attaching discharges
5. Plasma enhanced chemical vapor deposition of low dielectric constant parylene-F inter-metal dielectric films