3.5 V, 1 W high efficiency AlGaAs/GaAs HBTs with collector launcher structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 195-198

  Tateno, Y ^a   Yamada, H ^a   Ohara, S ^a   Kato, S ^a   Ohnishi, H ^a   Fujii, T ^a   Fukaya, J ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARBON; CURRENT DENSITY; MOBILE TELECOMMUNICATION SYSTEMS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; VOLTAGE CONTROL;

ALUMINUM GALLIUM ARSENIDE; COLLECTOR LAUNCHER STRUCTURE; KIRK EFFECT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0028747565     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)